کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1240703 | 1495735 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlled dissolution of silicon dioxide layers for depth resolved multielement analysis by inductively coupled plasma-mass spectrometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
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چکیده انگلیسی
Dissolution procedures were developed to control the number of surface layers removed, in an attempt to achieve depth resolved analysis by inductively coupled plasma-mass spectrometry (ICP-MS). NIST 612 glass was chosen because it is a homogeneous material with many elements at interesting concentrations, ~Â 50Â ppm. Varying dissolution time and HF concentration resulted in the reproducible removal of SiO2 layers as thin as 70Â Ã
deep. Dissolved trace metals were determined after dilution by inductively coupled plasma-mass spectrometry (ICP-MS) with a magnetic sector instrument. The amount removed was determined from the concentration of a major element, Ca. With the exception of Zn, trace metal concentrations agreed reasonably well with their certified values for removal depths of 500, 300 and 150Â Ã
. Zinc concentration was significantly high in all dissolutions indicating either a contamination problem or that Zn is removed at a faster rate than Ca. For the dissolutions that removed 70Â Ã
of SiO2, Cr, Mn, Co, Sr, Cd, Ce, Dy, Er, Yb and U recovery results agreed with their certified values (~Â 50Â ppm); Ti, As, Mo, Ba, and Th could not be determined because net intensities were below 3Ï of the blank; and measured concentrations for Cu, Pb and Zn were well above the certified values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 64, Issues 11â12, NovemberâDecember 2009, Pages 1235-1239
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 64, Issues 11â12, NovemberâDecember 2009, Pages 1235-1239
نویسندگان
Susan E. Lorge, R.S. Houk,