کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1240886 | 969147 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon High-sensitivity x-ray absorption fine structure investigation of arsenic shallow implant in silicon](/preview/png/1240886.png)
چکیده انگلیسی
High-sensitivity fluorescence-yield x-ray absorption fine structure spectroscopy (XAFS) has been investigated to characterize the local structure around arsenic shallow implant in silicon. Fluorescence-yield XAFS experiments were performed using a high-brilliance synchrotron radiation beam from an in-vacuum-type undulator in a third-generation light source. In addition to investigating the efficiency of high-brilliance undulator x-rays during the fluorescence-yield XAFS measurements, we compared the analytical performance of both the wavelength dispersive spectrometer (WDS) and the energy dispersive spectrometer (EDS) based on the silicon drift detector (SDD). It was confirmed that the WDS reduces the influence of scattering background due to the high spectral resolution. Another advantage of the WDS is high counting rate measurements. It was found that fluorescence-yield XAFS using undulator x-rays combined with the WDS permits superior sensitivity measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 64, Issue 8, August 2009, Pages 808-811
Journal: Spectrochimica Acta Part B: Atomic Spectroscopy - Volume 64, Issue 8, August 2009, Pages 808-811
نویسندگان
H. Yamazaki, M. Yoshiki, M. Takemura, M. Tomita, S. Takeno,