Sweeping total reflection X-ray fluorescence optimisation to monitor the metallic contamination into IC manufacturing

The relation between measurement results (surface coverage, throughput, low limit of detection, limit of quantification, quantification of localized contamination) and Sweeping Total reflection X-ray Fluorescence parameters (number of measurement points and integration time per point) is presented in details. In particular, a model is proposed to explain the mismatch between actual surface contamination in a localized spot on wafer and Total reflection X-ray Fluorescence reading. Both calibration and geometric issues have been taken into account.