کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1283360 | 1497639 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
PECVD grown boron nitride (BN) on crystalline silicon (c-Si) semiconductor was investigated by admittance measurement in the form of metal/insulator/semiconductor (MIS) structure. Apart from well-known regimes of traditional MOS structure, gradual bypassing of depletion layer was observed once ambient temperature (frequency) increased (decreased). Such an anomalous behavior was interpreted through modulations of charges located within BN film and/or at the interfacial layer of BN film/c-Si junction in terms of weighted average concept.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Hydrogen Energy - Volume 34, Issue 3, February 2009, Pages 1468–1471
Journal: International Journal of Hydrogen Energy - Volume 34, Issue 3, February 2009, Pages 1468–1471
نویسندگان
Orhan Özdemir,