کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1292474 | 973389 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Yttria-stabilized zirconia thin films deposited on NiO-(Sm2O3)0.1(CeO2)0.8 substrates by chemical vapor infiltration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
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چکیده انگلیسی
Fabrication of YSZ films deposited on NiO-samaria-doped ceria (SDC) substrate was studied by the chemical vapor infiltration method (CVI). A NiO-SDC substrate was used as oxygen source. The main mechanism of YSZ growth was electrochemical vapor deposition (EVD), while the contribution of oxygen in the carrier gas increased with increasing NiO content of the substrate above 60.6 mol%. The YSZ film on SDC used as the anode proved effective in obtaining high cell performance. In particular, a YSZ film thickness of 1 μm yielded the highest cell performance in the temperature range from 973 to 1073 K. The CVI method was useful for preparing a dense and strong YSZ film on the complex-shaped NiO-SDC substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Power Sources - Volume 162, Issue 2, 22 November 2006, Pages 1053-1059
Journal: Journal of Power Sources - Volume 162, Issue 2, 22 November 2006, Pages 1053-1059
نویسندگان
Kenji Kikuchi, Fuminori Tamazaki, Koji Okada, Atsushi Mineshige,