کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1308480 | 975174 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A phosphine complex of copper (I) bromide as single-source precursor for the aerosol-assisted chemical vapour deposition of phosphide A phosphine complex of copper (I) bromide as single-source precursor for the aerosol-assisted chemical vapour deposition of phosphide](/preview/png/1308480.png)
A new homobimetallic complex [Cu2(tpp)2(dppm)Br2] (1) of copper(I) bromide with triphenylphosphine (tpp) and bis-diphenylphosphinomethane (dppm) has been synthesized and charaterized by m.p., elemental analysis, FT-IR, 1H NMR, mass spectrometry, thermal studies and single crystal X-ray analysis. The solid-state molecular structure of 1, belonging to the monoclinic crystal system with space group P21/n, describes it as a neutral dinuclear species in which two copper atoms are bridged together through two bromides and a dppm ligand and each copper atom possesses a distorted tetrahedral geometry. Complex 1 was studied as a single-source precursor for the fabrication of phase pure thin films of Cu3P by aerosol-assisted chemical vapour deposition. The films have been characterized by PXRD, SEM and ED-XRF analyses and found to exhibit the particles size range 200−400 nm with high purity and surface uniformity.
Homobimetallic complex, [Cu2(tpp)2(dppm)Br2] (1), synthesized by direct reaction of dppm, tpp and CuBr in THF under normal conditions, was characterized by melting point, CHNS, FT-IR, TGA, mass spectrometry and single crystal X-ray diffraction. The complex 1 was tested at 450 °C to deposit Cu3P thin films by AACVD which were characterized by PXRD, SEM and ED-XRF.Figure optionsDownload as PowerPoint slide
Journal: Inorganica Chimica Acta - Volume 362, Issue 9, 1 July 2009, Pages 3069–3072