Synthesis, crystal structures and thermal behavior of Ni(pda)(hfac)2 and Ni(pda)(thd)2 as potential MOCVD precursors (pda-1,3-diaminopropane, hfac-1,1,1,5,5,5-hexafluoro-2,4-pentanedionato(-), thd-2,2,6,6-tetrametyl-3,5-heptanedionato(-))

Ni(pda)(hfac)2 (1) and Ni(pda)(thd)2 (2)   were synthesized and studied as new potential precursors for Metal-Organic Chemical Vapor Deposition (MOCVD). Both crystal structures have been determined by single-crystal X-ray diffraction: compounds are triclinic, space group P1¯, compound (1) has crystal parameters a = 8.5379(4), b = 10.4994(4), c = 11.4186(4) Å, α = 112.091(1), β = 98.385(1), γ = 92.937(1); compound (2) has crystal parameters a = 9.4622(3), b = 11.8986(5), c = 14.1575(6) Å, α = 71.600(1), β = 71.279(1), γ = 88.505(1). These are neutral complexes. Thermal gravimetric analyses (TG/DTA) have shown that both complexes sublime practically without decomposition. Thermodynamic parameters (ΔmpH, ΔmpS) and Tmp of the complexes were determined by differential scanning calorimetry. MOCVD test experiments were carried out at lower pressure using Ni(pda)(hfac)2(1) and Ni(pda)(thd)2 (2) as precursors. The films were grown on Ta/Si substrate and investigated by XRD and SEM.

Ni(pda)(hfac)2 (1) and Ni(pda)(thd)2 (2) were synthesized. Both crystal structures have been determined by single-crystal X-ray diffraction: compounds are triclinic, space group P1. Thermal gravimetric analyses (TG/DTA) have shown that both complexes sublime practically without decomposition. MOCVD test experiments were carried out at lower pressure using Ni(pda)(hfac)2(1) and Ni(pda)(thd)2 (2) as precursors. The films were grown on Ta/Si substrate and investigated by XRD and SEM.Figure optionsDownload as PowerPoint slideHighlights
► Ni(pda)(hfac)2 (1) and Ni(pda)(thd)2 (2) complexes were used as new potential precursors for Metal-Organic Chemical Vapor Deposition (MOCVD).
► Both complexes consist from neutral molecules.
► Ni(pda)(hfac)2 (1) and Ni(pda)(thd)2 (2) sublime practically without decomposition.
►  One-phase, Nicub, films were obtained from both precursors at Tevap = 383 K, Ts = 573 K.