کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1329037 1500108 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films
چکیده انگلیسی


• The properties of CdO films annealed in H2 gas were systematically studied.
• Cr3+ ions most likely occupied interstitial locations in CdO lattice and as donors.
• Improvement of conductivity parameters with Cr doping and H annealing.
• Bandgap narrowing observed with Cd-doping.

Cadmium oxide thin films doped with different amounts of chromium and annealed in hydrogen atmosphere have been grown on glass substrates by means of physical vapour deposition (PVD) method. The structural, electrical, and optical properties of the prepared Cr-doped CdO (CdO:Cr–H) films were systematically studied. The structural investigations show that the incorporated Cr ions mainly occupied locations in interstitial positions of CdO lattice. The bandgap engineer by Cr incorporation and hydrogenation were studied. The variations of the electrical parameters of CdO:Cr–H films with Cr incorporation and hydrogenation were investigated. It was established that among the investigated samples, the largest mobility and conductivity were measured with 1.5%:Cr–H film. Therefore, hydrogenated CdO:Cr films can be effectively used in different applications of near infrared-transparent-conducting-oxide (NIR-TCO).

Optoelectronic properties of synthesised chromium-doped CdO thin films. It was established that the largest mobility (53.4 cm2/V.s) and conductivity (2136.8 S/cm) were measured in 1.5%:Cr–H doped CdO film. Therefore, such films can be effectively used in near infrared-transparent-conducting-oxide (NIR-TCO).Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 208, December 2013, Pages 14–19
نویسندگان
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