One-step growth of Si3N4 stem–branch featured nanostructures: Morphology control by VS and VLS mode

We report here one-step synthesis of Si3N4 nanodendrites by selectively applying a vapor–solid (VS) and vapor–liquid–solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400–750 nm, suggesting their potential applications in light and electron emission devices.

Spine-shaped and pine-shaped Si3N4 hierarchical nanostructures were synthesized by VS and VLS mode with plasma-assisted dc arc discharge method. Figure optionsDownload as PowerPoint slideHighlights
► Si3N4 stem–branch featured nanostructures have been prepared.
► Spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode.
► Pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process.