کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1329151 | 978889 | 2010 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Recrystallization of Cu-poor CuInS2 assisted by metallic Cu or Ag Recrystallization of Cu-poor CuInS2 assisted by metallic Cu or Ag](/preview/png/1329151.png)
We monitor the recrystallization of Cu-poor CuInS2 thin films assisted by pure Cu or pure Ag by means of real-time synchrotron-based polychromatic X-ray diffraction. In both cases a new microstructure is formed accompanied by an increase in grain size. In the case of Cu, the onset temperature of the thin-film recrystallization is higher than 370 °C. In the case of Ag, the thin-film recrystallization comes to an end at 270 °C. The Ag-assisted recrystallization occurs in the presence of the body-centered cubic β-Ag2S phase. We find that domain growth and diffusion of silver into the film occur simultaneously.
Keywords: Recrystallization; Thin-film solar cells; Energy-dispersive x-ray diffractionIn-situ monitoring by means of energy-dispersive X-ray diffraction of the thin-film recrystallization of Cu-poor CuInS2 assisted by metallic Ag.Figure optionsDownload as PowerPoint slide
Journal: Journal of Solid State Chemistry - Volume 183, Issue 4, April 2010, Pages 803–806