Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells

• BaTiO3 nanocubes were prepared by one step facile hydrothermal method.
• Self-assembled BaTiO3 nanocubes thin films were obtained by drop-coating approach.
• The BaTiO3 nanocubes show excellent resistive switching properties for memory applications.

In this work, the self-assembled BaTiO3 nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58–70, better reliability and stability over various polycrystalline BaTiO3 nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details.

This work describes a novel resistive switching memory cell based on self-assembled BaTiO3 nanocubes.Figure optionsDownload as PowerPoint slide