Epitaxial growth of AlN films on single-crystalline Ta substrates

We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 °C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37° and 0.41°, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 °C.

An epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained for the first time on a Ta(110) substrate by the use of a PLD low-temperature growth technique.Figure optionsDownload as PowerPoint slide