High magnetic field induced spin flip/flop behavior and magnetic phase diagram of CuFe1−xGaxO2

• Single crystal samples of CuFe1−xGaxO2 (x=0, 0.03 and 0.05) were grown.
• Magnetic field dependence of magnetization was measured in pulsed high magnetic field up to 54 T with different temperatures.
• The magnetic field induced multi-step-like transitions were observed in all the single crystal samples.
• A detailed magnetic diagram was assumed based on the experimental results.

The structure and magnetic properties of non-magnetic Ga3+ ion doped CuFe1−xGaxO2 (x=0, 0.03, and 0.05) single crystal samples were investigated. X-ray diffraction patterns analysis confirms that the samples are single-phase crystallizing. Doping effect on the magnetic behavior of the ground state and the field-induced spin flip/flop transitions were detected. The transition temperatures and critical magnetic fields of the spin flip/flop, as well as the magnetic hysteresis directly depend on the Ga3+ doping level. Such doping effects may associate with the competition between dilution effect (partial release of spin frustration) and the induced local magnetic moment, which is the result of the changed magnetic coupling both inter- and intra-planes of Fe ions. Based on the experimental results, the effects of Ga3+ doping on the spin flip/flop behavior and a detailed high field magnetic diagram were assumed.

Temperature dependence of the critical fields for CuFe1−xGaxO2 (x=0, 0.03, 0.05). (a) and (b) The magnetic field׳s parallel and perpendicular cases respectively. In which, the square, circle and triangular represent x=0, 0.03 and 0.05 respectively. Figure optionsDownload as PowerPoint slide