Intergrowth structure of α-phase in β-type TmAlB4 compound studied by high-angle annular detector dark-field scanning transmission electron microscopy

• HAADF-STEM images directly represent arrangements of Tm atoms as bright dots.
• The α-type planar domains coherently intergrown in the β-type matrix.
• Bright strips appear at overlapped regions of Tm hexagons along interfaces between α- and β-type domains.

Nanostructure of a ThMoB4-type (β-type) TmAlB4 compound, in which YCrB4-type (α-type) domains are locally intergrown, is studied by high-angle annular detector dark-field scanning transmission electron microscopy (HAADF-STEM). Z-contrast images by HAADF-STEM directly represent the arrangements of Tm atoms located at centers of heptagonal atomic columns of B atoms as bright dots, and give us detailed information of intergrowth of type domains in the matrix of the β-type phase, which coherently occurs. Structural and bonding analyses for β-TmAlB4 point out the closeness in atomic interactions and energy of the α- and β-type structures which support the easy formation of such nanostructure intergrowths. From combination between HAADF-STEM and electronic structure calculation, a detailed local crystal structure with intrinsic building defects is effectively revealed.

Nanostructure of a ThMoB4-type (β-type) TmAlB4 compound, in which YCrB4-type (α-type) domains are locally intergrown, is studied by high-angle annular detector dark-field scanning transmission electron microscopy (HAADF-STEM). Z-contrast images by HAADF-STEM directly represent arrangements of Tm atoms located at centers of heptagonal atomic columns of B atoms as bright dots, and give us detailed information of the characteristic intergrowth structure of type domains in the matrix of the β-type phase.Figure optionsDownload as PowerPoint slide