Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt–silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100–800 nm in width and over 50 μm in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current–voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material.

Graphical AbstractTEM images, EDS, and electron diffraction pattern of bismuth nanobelts.Figure optionsDownload as PowerPoint slideHighlights
► Bismuth nanobelts in situ grown on silicon wafer were achieved.
► Special bismuth–silicon nanostructure.
► Potential application in sensitive magnetic sensor and other electronic devices.