کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1330783 978977 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and structural characterization of Al4SiC4-homeotypic aluminum silicon oxycarbide, [Al4.4Si0.6][O1.0C2.0]C
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Synthesis and structural characterization of Al4SiC4-homeotypic aluminum silicon oxycarbide, [Al4.4Si0.6][O1.0C2.0]C
چکیده انگلیسی

A new quaternary layered oxycarbide, [Al4.39(5)Si0.61(5)]Σ5[O1.00(2)C2.00(2)]Σ3C, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound was found to be hexagonal with space group P63/mmc, Z=2, and unit-cell dimensions a=0.32783(1) nm, c=2.16674(7) nm and V=0.20167(1) nm3. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The maximum-entropy methods-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were Rwp=3.73% (S=1.20), Rp=2.94%, RB=1.04% and RF=0.81%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al4SiC4 (space group P63mc, Z=2).

A new oxycarbide discovered in the Al–Si–O–C system, Al4SiC4-homeotypic [Al4.4Si0.6][O1.0C2.0]C. The crystal is an inversion twin, and hence the structure is represented by a split-atom model. The three-dimensional electron density distributions are determined by the maximum-entropy methods-based pattern fitting, being consistent with the disordered structural model.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 183, Issue 3, March 2010, Pages 636–642
نویسندگان
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