کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1331756 | 979015 | 2006 | 5 صفحه PDF | دانلود رایگان |

Ca(Zr0.05Ti0.95)O3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5μC/cm2, and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6×10-8A/cm2 at 3 V. Dielectric constant–voltage curve is located at zero bias field suggesting the absence of internal electric fields.
Dielectric constant and dielectric loss of the CZT thin film dependent of the applied frequency.Figure optionsDownload as PowerPoint slide
Journal: Journal of Solid State Chemistry - Volume 179, Issue 12, December 2006, Pages 3739–3743