کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1332199 979032 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Density functional study on electronic properties of P-doped spinel silicon carbon nitride
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Density functional study on electronic properties of P-doped spinel silicon carbon nitride
چکیده انگلیسی

We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si3N4, the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed.

We performed density functional calculations to predict the insulator-to-metal transition by replacing Si by C at the tetrahedral sites of P-doped c-Si3N4.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 181, Issue 8, August 2008, Pages 2113–2116
نویسندگان
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