کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1332253 1500114 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Behavior of sheet-like crystalline ammonium trivanadate hemihydrate (NH4V3O8×0.5H2O) as a novel ammonia sensing material
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Behavior of sheet-like crystalline ammonium trivanadate hemihydrate (NH4V3O8×0.5H2O) as a novel ammonia sensing material
چکیده انگلیسی


• A simple hydrothermal method for the fast synthesis of trivanadate hemihydrate (NH4V3O8×0.5H2O) is reported.
• Sheet particles could be obtained.
• A preliminary demonstration of the feasibility of using NH4V3O8×0.5H2O as a novel ammonia sensing material is presented.

This work reports the use of ammonium trivanadate hemihydrate (NH4V3O8×0.5H2O) as a novel sensing material for ammonia resistive sensors. It was prepared by a simple and fast hydrothermal method from V2O5 as a precursor and characterized by SEM, FT-IR, XRD and TG techniques. The as-synthesized material showed a sheet-like morphology and was found thermally stable up to 250–280 °C. It reacted promptly and irreversibly when exposed to ammonia at room temperature. A full reversibility was instead registered undergoing the formed ammonia adduct at a temperature higher than 200 °C.A NH4V3O8×0.5H2O-based resistive gas sensor was fabricated and its sensing properties were evaluated. Experimental results obtained have given a preliminary demonstration of the feasibility of using NH4V3O8×0.5H2O as a novel ammonia sensing material since it yields several advantages including easy synthesis of the sensing layer, good sensitivity and reproducibility and fast response.

Sheet-like morphology of the synthesized trivanadate hemihydrate (NH4V3O8×0.5H2O). Inset: Its electrical response to different ammonia concentrations in air.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 202, June 2013, Pages 105–110
نویسندگان
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