کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1333499 979082 2006 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of MnAs microstructures on GaAs(001) substrates and their electrical properties
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Fabrication of MnAs microstructures on GaAs(001) substrates and their electrical properties
چکیده انگلیسی

We explore wet and dry etching processes of thin MnAs layers grown on GaAs(0 0 1) substrates for microstructuring. Most of the common wet chemical etch solutions for GaAs react with MnAs strongly and in a peculiar manner. Unidirectional cracks are generated when the MnAs layers are thicker than 100 nm. We demonstrate that the crack generation can be avoided by choosing a suitable etch solution or etch temperature. We fabricate submicrometer-wide MnAs wires using Ar ion milling. The resistivity of the narrow channels is measured over a temperature range covering the phase transitions in MnAs between the αα, ββ, and γγ phases. The resistivity along the MnAs[0 0 0 1] direction is found to be smaller than that along the MnAs[112¯0] direction regardless of the phase. A nearly linear temperature variation of the phase fraction is deduced in the αα–ββ phase coexistence regime. The temperature coefficients of the resistivities are negative for the nonmagnetic phases.

Surface of a partly etched MnAs film grown on a GaAs(001) substrate.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 179, Issue 8, August 2006, Pages 2271–2280
نویسندگان
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