کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1333499 | 979082 | 2006 | 10 صفحه PDF | دانلود رایگان |

We explore wet and dry etching processes of thin MnAs layers grown on GaAs(0 0 1) substrates for microstructuring. Most of the common wet chemical etch solutions for GaAs react with MnAs strongly and in a peculiar manner. Unidirectional cracks are generated when the MnAs layers are thicker than 100 nm. We demonstrate that the crack generation can be avoided by choosing a suitable etch solution or etch temperature. We fabricate submicrometer-wide MnAs wires using Ar ion milling. The resistivity of the narrow channels is measured over a temperature range covering the phase transitions in MnAs between the αα, ββ, and γγ phases. The resistivity along the MnAs[0 0 0 1] direction is found to be smaller than that along the MnAs[112¯0] direction regardless of the phase. A nearly linear temperature variation of the phase fraction is deduced in the αα–ββ phase coexistence regime. The temperature coefficients of the resistivities are negative for the nonmagnetic phases.
Surface of a partly etched MnAs film grown on a GaAs(001) substrate.Figure optionsDownload as PowerPoint slide
Journal: Journal of Solid State Chemistry - Volume 179, Issue 8, August 2006, Pages 2271–2280