کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1333500 979082 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal stability of high surface area silicon carbide materials
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Thermal stability of high surface area silicon carbide materials
چکیده انگلیسی

The synthesis of mesoporous silicon carbide by chemical vapor infiltration of dimethyl dichlorosilane into mesoporous silica SBA-15 and subsequent dissolution of the silica matrix with HF was investigated. The influence of the synthesis parameters of the composite material (SiC/SBA-15) on the final product (mesoporous SiC) was determined. Depending on the preparation conditions, materials with specific surface areas from 410 to 830 m2 g−1 and pore sizes between 2 and 10 nm with high mesopore volume (0.31–0.96 cm3 g−1) were prepared. Additionally, the thermal stability of mesoporous silicon carbide at 1573 K in an inert atmosphere (argon) was investigated, and compared to that of SBA-15 and ordered mesoporous carbon (CMK-1). Mesoporous SiC has a much higher thermal textural stability as compared to SBA-15, but a lower stability than ordered mesoporous carbon CMK-1.

The synthesis of mesoporous silicon carbide by chemical vapor infiltration of dimethyl dichlorosilane into mesoporous silica SBA-15 and subsequent dissolution of the silica matrix was used for the preparation of mesoporous SiC with high specific surface areas up to 830 m2 g−1 and pore sizes between 2 and 10 nm.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 179, Issue 8, August 2006, Pages 2281–2289
نویسندگان
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