Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O3Ba0.5Sr0.5(Ti0.80Sn0.20)O3 thin films grown by the soft chemical method

Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O3Ba0.5Sr0.5(Ti0.80Sn0.20)O3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from C–VC–V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C–VC–V curves and confirmed by the hysteresis curve, showed remnant polarization of 14μC/cm2 and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to 1.5×10-7A/cm2. This work clearly reveals the highly promising potential of BST:Sn for application in memory devices.

P-E hysteresis loops for BST:Sn film annealed at 700∘C700∘C for 2 hours in oxygen atmosphere.Figure optionsDownload as PowerPoint slide