Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

• The physical properties of CuZn2InTe4 and CuCd2InTe4 are reported for the first time.
• These materials have potential for thermoelectric applications.
• Their direct band gaps also suggest potential for photovoltaics applications.

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn2InSe4. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

The structural, optical and electrical properties of the quaternary chalcogenides CuZn2InTe4 and CuCd2InTe4 are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications.Figure optionsDownload as PowerPoint slide