Photoluminescence intensity of single-wall carbon nanotubes

The photoluminescence (PL) intensity of a single-wall carbon nanotube (SWNT) is calculated for each (n, m) by multiplying the photon-absorption, relaxation and photon-emission matrix elements. The intensity depends on chirality and “type I vs type II” for smaller diameter semiconducting SWNTs (less than 1 nm). By comparing the calculated results with the experimental PL intensity of SWNTs prepared by chemical vapor deposition at different temperatures, we find that the abundance of (n, m) nanotubes with smaller diameters should exhibit a strong chirality dependence, which may be related to the stability of their caps.