کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1442375 | 1509440 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Quantum efficiency evolution in a hole-injection layer inserted within a polymer light-emitting diode Quantum efficiency evolution in a hole-injection layer inserted within a polymer light-emitting diode](/preview/png/1442375.png)
Based on a time-dependent theoretical description of electronic transitions, the evolution of quantum efficiency is explored and illustrated in detail. When a hole-injection layer is embedded inside the sandwich structure of a polymer light-emitting diode (PLED), the ultrafast process of a collision between an injected positive polaron and triplet exciton not only induces the triplet exciton to be an emissive carrier, but also immediately improves the quantum efficiency to 37% at the beginning of the relaxation. Considering the radiative decay of a singlet exciton, this ultrafast process also improves the quantum efficiency, but limits it to 25% within 1.0 ns. These two different emissive processes comprise the whole evolution of quantum efficiency for the new PLED, and both of them improve the quantum efficiency to 62.5%, which is consistent with the experimental result of 60%.
Journal: Synthetic Metals - Volume 160, Issues 17–18, September 2010, Pages 2023–2027