کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1465151 | 989682 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Doped Ge–Sb–Te phase-change materials for reversible phase-change optical recording
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Differently doped Ge–Sb–Te phase-change recording films were prepared by the individual dc magnetron sputtering of Sn5Ge3Sb72Te20, In5Ge3Sb72Te20, Ga5Ge3Sb72Te20 and Bi5Ge3Sb72Te20 targets. A close relationship was observed between surface roughness and reflectivity. The Ge–Sb–Te films doped with Bi showed the highest surface roughness and reflectivity. The phase-change optical disks with Bi-doped Ge–Sb–Te recording films showed the best overwriting characteristics. Therefore, the reversible recording properties of the phase-change optical disk were dominated by the composition of the recording film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 33, Issue 7, September 2007, Pages 1161–1164
Journal: Ceramics International - Volume 33, Issue 7, September 2007, Pages 1161–1164
نویسندگان
Su-Shia Lin,