Growth kinetics and stoichiometry of ZnS films obtained by close-spaced vacuum sublimation technique

Surface roughness, stoichiometry, deposition rates and activation energy of different growth mechanisms of zinc sulfide films are investigated. The films were deposited onto glass-ceramic substrates by close-spaced vacuum sublimation technique (CSVS) at different deposition temperatures. Rutherford backscattering spectroscopy (RBS) using helium ions with 1.8 MeV energy and EDAX method were applied for determination of film thickness and stoichiometry. The effect of the deposition temperature on film properties has been studied.

Figure optionsDownload as PowerPoint slide