کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1506848 993811 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nanostructured nickel fluoride thin film as a new Li storage material
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Nanostructured nickel fluoride thin film as a new Li storage material
چکیده انگلیسی

Nanostructured nickel fluoride thin films have been successfully prepared by pulsed laser deposition (PLD) and they showed significant electrochemical activity with lithium. The electrochemical performance of NiF2 thin film electrode was examined by the cyclic voltammetry and the discharge and charge measurements. A reversible capacity around 540 mAh/g was found after initial discharge. The electrochemical reaction process was revealed by transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Li2NiF4 was identified as an intermediary product in the reversible electrochemical reaction of NiF2 with Li.

Nanostructured nickel fluoride thin films have been successfully prepared by pulsed laser deposition and the initial discharge and charge curves of NiF2/Li cells cycled between 0.01 V and 3.5 V at a constant current density of 10 μA/cm2 exhibit their electrochemical activity. The first discharge capacity of 650 mAh/g for the cell is found for the decomposition of NiF2. This corresponds to about 2.35 Li per NiF2. The capacity fading is only 0.4% per cycle after 40 charge–discharge cycles, indicating highly active thin film with high specific capacities and good cyclic performance. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements suggest that multi-step reactions have been involved in the decomposition and composition of NiF2 and Li2NiF4 was identified as an intermediary product in the reversible electrochemical reaction of NiF2 with Li.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 10, Issue 9, September 2008, Pages 1166–1172
نویسندگان
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