کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
151687 456477 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The synthesis of diamond films on adamantane-coated Si substrate at low temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
The synthesis of diamond films on adamantane-coated Si substrate at low temperature
چکیده انگلیسی

Diamond films have been synthesized on the adamantane-coated Si (1 0 0) substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases with a growth rate of ∼6.7 nm/min. The substrate temperature was ∼475 °C during diamond deposition. The films obtained have good crystallinity that is characterized by scanning electron microscopy and Raman spectrometry. X-ray photoelectron spectroscopy analysis has confirmed that diamond nucleation and growth are on SiC rather than clean Si. The possible mechanism of high rate growth diamond films has been demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Engineering Journal - Volume 158, Issue 3, 15 April 2010, Pages 641–645
نویسندگان
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