کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1529803 995772 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Self-organized formation and optical study of GaN micropyramids
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Self-organized formation and optical study of GaN micropyramids
چکیده انگلیسی

In this paper, we report the formation of GaN micropyramids via a self-organized process by ammoniating Ga2O3 powders at high temperature. The obtained GaN micropyramids are typically in wurtzite hexagonal structure, exhibiting six-fold symmetrical morphology and single crystalline characteristic. Cathodoluminescence (CL) studies demonstrated that a weak near-band-edge emission centered at ∼385 nm and a broad yellow-band in the range of 500–800 nm were observed in the GaN micropyramids, and the related light emission mechanism was discussed based on the microstructure analysis.


► GaN micropyramids could be synthesized through a feasible self-organized CVD process.
► HRTEM analysis indicated that the GaN pyramids are of high crystal quality without structural defects.
► Cathodoluminescence measurement shows that the GaN pyramids possess a near band-edge emission at 385 nm and a broad yellow band in visible range.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 176, Issue 10, 15 June 2011, Pages 805–809
نویسندگان
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