کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531342 1512005 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures
چکیده انگلیسی

The electrical and optical properties of the lattice-mismatched InGaAs/GaAs heterostructures, with partial strain relaxation, were studied by deep level transient spectroscopy (DLTS) and photoreflectance (PR) spectroscopy, respectively. In the samples one of deep electron traps, revealed by DLTS, was ascribed to misfit dislocations at the interface, for which capture kinetics, concentration depth profiles and the type of electronic states have been specified. Room temperature PR spectroscopy was used for analysing the effect of residual strain on the optical response from the samples, i.e. interband transitions and the valence band splitting.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 147, Issues 2–3, 15 February 2008, Pages 166–170
نویسندگان
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