کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1531350 | 1512005 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO2 onto Si wafers (in a single run at 390 °C and 50 mTorr, using GeH4, Si2H6 and O2) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 °C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from â3 to â¥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (â35 nm) annealed at 900 °C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 °C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 147, Issues 2â3, 15 February 2008, Pages 200-204
Journal: Materials Science and Engineering: B - Volume 147, Issues 2â3, 15 February 2008, Pages 200-204
نویسندگان
M. Avella, Á.C. Prieto, J. Jiménez, A. RodrÃguez, J. Sangrador, T. RodrÃguez, M.I. Ortiz, C. Ballesteros,