کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1535246 1512621 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Er3+ doped GYSGG crystal as a new laser material resistant to ionizing radiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Er3+ doped GYSGG crystal as a new laser material resistant to ionizing radiation
چکیده انگلیسی

We demonstrate a 968 nm diode end-pumped Er:GYSGG (Gd1.17Y1.83Sc2Ga3O12) laser at 2.796 μm operated in the pulse and continuous-wave (CW) modes. A maximum laser energy of 2.43 mJ is obtained at a pulse width of 2 ms, corresponding to a peak power of 1.25 W and a slope efficiency of 7.2%. In the CW mode, the maximum output power is 348 mW, corresponding to an optical–optical conversion efficiency of 9.2% and a slope efficiency of 10.1%. The M2 factor is 1.94, and the beam divergence is 6.4 mrad. Gamma irradiation at 100 Mrad only slightly affects laser output performance. This result suggests that Er:GYSGG crystal is a potentially new mid-infrared radiation-resistant laser material that can be applied in space and ionizing radiation environment.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volumes 301–302, 1 August 2013, Pages 84–87
نویسندگان
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