Near-field investigation of exciton dynamics under semiconductor surface

The near-field images calculation method for the semiconductor surface with the excitons generated by strong focused laser pulse was proposed. Calculation was performed using Green function method in the frame of concept of local field. The main characteristic of the proposed approach is maximal usage of the analytical calculations. The near-field images for the Si surface were studied. Developed approach is universal and could be able to find with experimental data on time-resolved near-field microscopy some parameters of exciton such as diffusion constant, relaxation time, and surface state density.