کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1563304 | 999607 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A computational study of ion-implanted beryllium diffusion in gallium arsenide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The diffusion of implanted beryllium in gallium arsenide at 100 keV for doses of 1 Ã 1013 and 1 Ã 1014 cmâ2 during post-implant RTA were studied and simulated at temperatures of 700-900 °C for 1-4 min. The observed Be diffusion profiles, obtained by the SIMS technique, can be satisfactorily explained in terms of a “kick-out” model of the substitutional-interstitial diffusion mechanism, involving singly ionized Be and doubly ionized Ga interstitial species. The generation of the excess Ga interstitials, according to the “plus-one” approach, and its annihilation in the local Ga interstitial sink region were taken into account. The corresponding coupled partial differential equations of the relevant diffusion model were solved numerically with proper initial and boundary conditions using the computational algorithms based on finite-difference approximations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 43, Issue 4, October 2008, Pages 902-908
Journal: Computational Materials Science - Volume 43, Issue 4, October 2008, Pages 902-908
نویسندگان
S.D. Koumetz, J.-C. Pesant, C. Dubois,