کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1590701 | 1515442 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparison of dominant recombination mechanisms in n-type InAsSb materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present paper, a theoretical investigation has been carried out to estimate the lifetime of the minority carriers of n-InAsSb arising out of various recombination mechanisms e.g. radiative recombination, SRH recombination and Auger recombination. It is seen that among the three dominant recombination mechanisms Auger recombination is most significant at or near room temperature when the doping concentration ranges from 1023 to 1025 m−3. The high value of Auger recombination lifetime of carries at room temperature would adversely affect the performance of optoelectronic devices based on InAsSb.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 52, Issues 1–2, March–June 2006, Pages 33–39
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 52, Issues 1–2, March–June 2006, Pages 33–39
نویسندگان
R.K. Lal, P. Chakrabarti,