کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1605570 | 1516212 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field emission properties of Ge-doped GaN nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The field emission properties of Ge-dopted GaN nanowires have been investigated in theory and experiment. Ge-doping affecting field emission properties of GaN nanowires has been calculated via the basis of density functional theory (DFT). The results indicate that Ge-doped GaN nanowires have a minimum work function value of 2.37Â eV when the impurity concentration is about 4.2Â at.%, which is superior for application in cathode material for field emission. In addition, Ge-doped GaN nanowires have been synthesized via CVD method in our experiment. The results indicate: (1) the structure of GaN NWs is wurtzite hexagonal and the growth direction is along [0001]. (2) Ge-doped GaN nanowires possess a lower turn-on field than the pure GaN nanowires, which means Ge-doping can enhance the field emission properties of GaN nanowires, and this is consistent with the theoretical calculation results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 681, 5 October 2016, Pages 324-329
Journal: Journal of Alloys and Compounds - Volume 681, 5 October 2016, Pages 324-329
نویسندگان
Enling Li, Bei Wu, Shitao Lv, Zhen Cui, Deming Ma, Wei Shi,