Electrical and photoresponse properties of Al/graphene oxide doped NiO nanocomposite/p-Si/Al photodiodes

• Al/graphene oxide doped NiO nanocomposite/p-Si/Al photodiodes were fabricated.
• NiO based nanocomposite films were prepared by sol–gel spin method.
• The fabricated diodes can be used as a photodiode in optoelectronic applications.

The electrical and photoconducting properties of Al/graphene oxide doped NiO nanocomposite/p-Si/Al photodiodes with various graphene oxide contents were investigated by using current–voltage, transient photocurrent, photocapacitance and photoconductance measurements at various illumination intensities in the range of 10–100 mW/cm2. Graphene oxide doped NiO nanocomposite thin films were prepared by sol–gel spin method. Experimental results indicate that the reverse current of the photodiodes increases with the increasing illumination intensity. The value of transient photocurrent, photocapacitance and photoconductance measured as a function of time increases after illuminating and returns to original value after turning off the illumination. In addition, the frequency-dependent capacitance and conductance measurements was performed to indicate the existence of interface states. The obtained results suggest that the fabricated diode can be used as a photodiode in optoelectronic applications.

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