Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications

Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 663, 5 April 2016, Pages 419-423

Sungjun Kim, Hyungjin Kim, Sunghun Jung, Min-Hwi Kim, Sang-Ho Lee, Seongjae Cho, Byung-Gook Park,