کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1608337 | 1516248 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I-V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 645, 5 October 2015, Pages 29-33
Journal: Journal of Alloys and Compounds - Volume 645, 5 October 2015, Pages 29-33
نویسندگان
Silan Baturay, Yusuf Selim Ocak, Derya Kaya,