کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1608458 | 1516245 | 2015 | 7 صفحه PDF | دانلود رایگان |

• The quantum yield of the obtained AgInS2–ZnS QDs was up to 72%.
• The effect of the reaction time was investigated.
• The morphologies of the obtained QDs were varied as the PL QYs.
• The component of PL bands resulted from Zn doping was observed.
• The PL behavior was originated from the donor-acceptor recombination.
Highly luminescent AgInS2–ZnS quantum dots were obtained by a one-pot two steps hot injection approach. The effect of the reaction time on the properties of the quantum dot was systematically investigated. By the introduction of Zn ions, the emission peak was blue-shift from 638 nm to 584 nm in 15 min, while the emission peaks of the obtained AgInS2–ZnS quantum dots were tuned in a narrow range with a bit red-shift from 584 to 589 nm as the reaction was continued. The highest photoluminescence quantum yield (PL QY) was up to about 72% when the reaction was prolonged to 15 min. Further, results showed that the morphologies were varied as the reaction was continued. In addition, the PL decay curves demonstrated that the component of PL bands resulted from Zn doping was observed, while the PL behavior was originated from the donor-acceptor recombination.
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Journal: Journal of Alloys and Compounds - Volume 648, 5 November 2015, Pages 127–133