Microstructural, mechanical and electrical characterization of directionally solidified Al–Si–Mg eutectic alloy

• The dependency of HV on V was obtained as HV = 119.9 (V)0.07 for Al–Si–Mg eutectic alloy.
• The dependency of σt on V was obtained as σt = 22.84 (V)0.20 for Al–Si–Mg eutectic alloy.
• The dependency of ρ on V was obtained as ρ = 32.31 × 10−8 (V)0.13 for Al–Si–Mg eutectic alloy.
• The bulk growth rates were determined as λSi2V=847.69 and λMg2Si2V=597.5μm/s.

Al–12.95 wt.% Si–4.96 wt.% Mg alloy was directionally solidified upward at a constant temperature gradient (G = 9.39 K/mm) with different growth rates (V = 8.64–165.20 μm/s) by using a Bridgman type directional solidification furnace. The ternary eutectic alloy consists of irregular Si plates and Mg2Si Chinese’s script within an aluminum matrix. The dependencies of lamellar spacings (λSiλSi and λMg2SiλMg2Si), microhardness, tensile strength and electrical resistivity on growth rates were obtained as HV = 119.9 (V)0.07, σt = 222.84 (V)0.20 and ρ = 32.31 × 10−8 (V)0.13, respectively for Al–Si–Mg eutectic alloy. The bulk growth rates were determined as λSi2V=847.69 and λMg2Si2V=597.5μm3/s by using the measured values of λSi, λMg2SiλMg2Si and V. A comparison of present results was also made with the previous similar experimental results.

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