Highly conducting and wide-band transparent F-doped Zn1−xMgxO thin films for optoelectronic applications

• F-doped Zn1−xMgxO thin films were deposited using pulsed laser deposition.
• The optimal amount of F doping can decrease the resistivity and broaden bandgap of Zn1−xMgxO thin films.
• Zn1−xMgxO thin films can be applied as transparent electrodes.

Fluorine (F) doped Zn1−xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn1−xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350 °C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92 × 10−4 Ω cm, with a carrier concentration of 5.26 × 1020 cm−3, and a Hall mobility of 17.2 cm2 V−1 s−1. The average optical transmittance is higher than 85% in the visible wavelength region.