کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612101 | 1516304 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE-PECE treatment. Overgrowth of LED structures on the ECE-PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 589, 15 March 2014, Pages 507-512
Journal: Journal of Alloys and Compounds - Volume 589, 15 March 2014, Pages 507-512
نویسندگان
Lee-Woon Jang, Dae-Woo Jeon, A.Y. Polyakov, A.V. Govorkov, V.N. Sokolov, N.B. Smirnov, Han-Su Cho, Jin-Hyeon Yun, K.D. Shcherbatchev, Jong-Hyeob Baek, In-Hwan Lee,