کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612165 | 1516305 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanostructured CexZn1âxO thin films: Influence of Ce doping on the structural, optical and electrical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Highlights
- Thin films of Ce doped ZnO were prepared by nebulizer spray pyrolysis technique.
- Films were deposited at different cerium concentrations 2.5%, 5.0%, 7.5% and 10%.
- Ce doped ZnO films are found to have more grains along [0Â 0Â 2] direction.
- The band gap energy was found to be decreased with the increase of Ce doping.
- CexZn1âxO films ensure their stability and suitability for gas sensors.
- Thin films of Ce doped ZnO were prepared by nebulizer spray pyrolysis technique.
- Films were deposited at different cerium concentrations 2.5%, 5.0%, 7.5% and 10%.
- Ce doped ZnO films are found to have more grains along [0Â 0Â 2] direction.
- The band gap energy was found to be decreased with the increase of Ce doping.
- CexZn1âxO films ensure their stability and suitability for gas sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 588, 5 March 2014, Pages 170-176
Journal: Journal of Alloys and Compounds - Volume 588, 5 March 2014, Pages 170-176
نویسندگان
R. Mariappan, V. Ponnuswamy, P. Suresh, R. Suresh, M. Ragavendar, A. Chandra Bose,