کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612656 | 1516307 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective suppression of interfacial intermetallic compound growth between Sn-58Â wt.% Bi solders and Cu substrates by minor Ga addition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Overgrowth of the intermetallic compound (IMC) layer between Sn-58 wt.% Bi (Sn-58Bi) solders and Cu substrates significantly degrades the reliability of electronic products. Doping active elements into Sn-58Bi solders is a common approach for improving joint properties. In this study, minor amounts of Ga, ranging from 0.25 to 3.0 wt.%, were doped into Sn-58Bi solders. The interfacial reactions between the Ga-doped Sn-58Bi solders and Cu substrates at 200 °C were investigated using electron probe microanalysis (EPMA) and CALPHAD thermodynamic modeling. Four IMCs, namely θ-CuGa2, γ1-Cu9Ga4, η-Cu6Sn5, and ε-Cu3Sn phases, were observed. For longer reaction time or lower doping levels of Ga in the solders, the diffusion paths across the Ga-doped Sn-58Bi/Cu couples changed from L/θ/γ1/Cu to L/γ1/ε/Cu and L/γ1/η/ε/Cu. The dense γ1-Cu9Ga4 layer acted as a native diffusion barrier. The growth of the IMC layer was effectively suppressed with minor Ga addition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 586, 15 February 2014, Pages 319-327
Journal: Journal of Alloys and Compounds - Volume 586, 15 February 2014, Pages 319-327
نویسندگان
Shih-kang Lin, Trong Lan Nguyen, Shu-chang Wu, Yu-hsiang Wang,