کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1613004 | 1516308 | 2014 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles](/preview/png/1613004.png)
• A simply fabricated platform for high efficiency plasmonic LED is demonstrated.
• Blue light emission is increased by 4.4-fold via localized surface plasmon coupling.
• A 1.5-fold higher spontaneous emission rate confirms the fast recombination channel.
• 53% enhancement in internal quantum efficiency was performed.
An approach for fabricating localized surface plasmon (LSP)-enhanced light-emitting diodes (LEDs) with Ag nanoparticles (NPs) in close proximity to the active layers is demonstrated. The blue light emission from InGaN/GaN multiple quantum wells (MQWs) is increased by 4.4-fold at a wavelength of 470 nm. A faster decay time and a ∼1.5-fold higher spontaneous emission rate confirm the fast recombination channel provided by the LSP coupling mode of the Ag NPs. The internal quantum efficiency is improved by ∼53%. The proposed approach provides a low-cost, large-area, and simple platform for the development of high-efficiency InGaN-based plasmonic LEDs.
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Journal: Journal of Alloys and Compounds - Volume 585, 5 February 2014, Pages 460–464