کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1613098 | 1516311 | 2014 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermally-induced crystallization behaviour of 80GeSe2-20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermally-induced crystallization behaviour of 80GeSe2-20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy Thermally-induced crystallization behaviour of 80GeSe2-20Ga2Se3 glass as probed by combined X-ray diffraction and PAL spectroscopy](/preview/png/1613098.png)
چکیده انگلیسی
Crystallization behaviour of 80GeSe2-20Ga2Se3 glass caused by thermal annealing at 380 °C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 582, 5 January 2014, Pages 323-327
Journal: Journal of Alloys and Compounds - Volume 582, 5 January 2014, Pages 323-327
نویسندگان
O. Shpotyuk, L. Calvez, E. Petracovschi, H. Klym, A. Ingram, P. Demchenko,