کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1613489 | 1516318 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study on electroluminescence from ZnO-based double heterojunction light emitting diodes grown on different lattice mismatch substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have comparatively investigated the electroluminescence (EL) performance from the asymmetric p-Mg0.05Zn0.95O/i-ZnO/n+-GaN and p-Mg0.05Zn0.95O/i-ZnO/n+-Si double-heterojunction light emitting diodes (LEDs) grown on different lattice mismatch substrates. The I-V curve measurements show clear rectification characteristics with a threshold voltage of 3.8 and 6Â V for the p-Mg0.05Zn0.95O/i-ZnO/n+-GaN and p-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunctions, respectively. A strong violet-ultraviolet EL emission and no deep-level emission were observed for the p-Mg0.05Zn0.95O/i-ZnO/n+-GaN double heterojunction grown on small lattice-mismatched n+-GaN substrate. In comparison, a dominant visible emission band and a weak ultraviolet emission peak were observed for p-Mg0.05Zn0.95O/i-ZnO/n+-Si double heterojunction grown on large lattice-mismatched n+-Si substrate. The difference between both LEDs is due to different quality of the MgZnO and ZnO layers grown on different lattice mismatch substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 575, 25 October 2013, Pages 233-238
Journal: Journal of Alloys and Compounds - Volume 575, 25 October 2013, Pages 233-238
نویسندگان
Yongfeng Li, Bin Yao, Rui Deng, Binghui Li, Zhenzhong Zhang, Chongxin Shan, Dongxu Zhao, Dezhen Shen,