Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film

► The atomic bonding within a-Si1−xCx:H thin film prepared using PECVD is adjustable via annealing. ► With the increased annealing temperature, the content of Si-Hn group and C-Hn group decrease, and more Si-C bonds and sp3 hybridized C clusters form in the a-Si1−xCx:H thin film. ► Annealing with increased temperature induces enlarged optical band gap. ► The PL efficiency is enhanced via the atomic bonding control.